1/8 june 2002 STW9NB80 n-channel 800v - 0.85 w - 9.3a to-247 powermesh? mosfet n typical r ds (on) = 0.85 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay? process, stmicroelectronics has designed an ad- vanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprieraty edge termi- nation structure, gives the lowest rds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. applications n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d STW9NB80 800v < 1 w 9 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 800 v v dgr drain-gate voltage (r gs = 20 k w ) 800 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 9.3 a i d drain current (continuos) at t c = 100c 5.8 a i dm ( l ) drain current (pulsed) 37 a p tot total dissipation at t c = 25c 190 w derating factor 1.52 w/c dv/dt(1) peak diode recovery voltage slope 4 v/ns t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c (1)i sd 9.3a, di/dt 100a/s, v dd v (br)dss , t j t jmax. to-247 1 2 3 internal schematic diagram
STW9NB80 2/8 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic rthj-case thermal resistance junction-case max 0.66 c/w rthj-amb thermal resistance junction-ambient max 30 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 9.3 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 600 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 4.6a 0.85 1 w symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds > i d(on) x r ds(on)max, i d = 4.6 a 9s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 2100 pf c oss output capacitance 250 pf c rss reverse transfer capacitance 27 pf
3/8 STW9NB80 safe operating area thermal impedance electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time rise time v dd = 400v, i d = 4.5 a r g = 4.7 w , v gs = 10v (see test circuit, figure 3) 28 ns t r 20 ns q g total gate charge v dd = 640v, i d = 9 a, v gs = 10v, r g =4.7 w 53 74 nc q gs gate-source charge 13 nc q gd gate-drain charge 25 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 640v, i d = 9 a, r g = 4.7 w, v gs = 10v (see test circuit, figure 5) 22 ns t f fall time 22 ns t c cross-over time 35 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 9 a i sdm (2) source-drain current (pulsed) 36 a v sd (1) forward on voltage i sd = 9 a, v gs = 0 1.6 v t rr reverse recovery time i sd = 9.3 a, di/dt = 100 a/s, v dd = 100v, t j = 150c (see test circuit, figure 5) 900 ns q rr reverse recovery charge 9.2 c i rrm reverse recovery current 20 a
STW9NB80 4/8 gate charge vs gate-source voltage capacitance variations static drain-source on resistance transconductance transfer characteristics output characteristics
5/8 STW9NB80 source-drain diode forward characteristics normalized on resistance vs temperature normalized gate thereshold voltage vs temp.
STW9NB80 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/8 STW9NB80 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 d 2.20 2.60 0.08 0.10 e 0.40 0.80 0.015 0.03 f 1 1.40 0.04 0.05 f1 3 0.11 f2 2 0.07 f3 2 2.40 0.07 0.09 f4 3 3.40 0.11 0.13 g 10.90 0.43 h 15.45 15.75 0.60 0.62 l 19.85 20.15 0.78 0.79 l1 3.70 4.30 0.14 0.17 l2 18.50 0.72 l3 14.20 14.80 0.56 0.58 l4 34.60 1.36 l5 5.50 0.21 m 2 3 0.07 0.11 v 5 o5o v2 60o 60o dia 3.55 3.65 0.14 0.143 to-247 mechanical data
STW9NB80 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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